Behavior of Wafer SMD (Surface Micro Defect) as a Origin of Oxide Breakdown

Moriya MIYASHITA; Hiroyuki FUKUI; Atsuko KUBOTA; Shuichi SAMATA; Hachiro HIRATSUKA; Yoshiaki MATSUSHITA

doi:https://doi.org/10.7567/SSDM.1991.PB7-6

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜 1991年8月29日
Pacifico Yokohama, Yokohama, Japan

[PB7-6] Behavior of Wafer SMD (Surface Micro Defect) as a Origin of Oxide Breakdown

Moriya MIYASHITA、Hiroyuki FUKUI、Atsuko KUBOTA、Shuichi SAMATA、Hachiro HIRATSUKA、Yoshiaki MATSUSHITA (1.Semiconductor Materials Engineering Dept. Toshiba Corporation)

https://doi.org/10.7567/SSDM.1991.PB7-6

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