[PC4-3] GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base

Shinji NOZAKI, Ryuji MIYAKE, Junichi SHIRAKASHI, Ming QI, Takumi YAMADA, Eisuke TOKUMITSU, Makoto KONAGAI, Kiyoshi TAKAHASHI, Kazuhiko MATSUMOTO (1.Dept. of Physical Electronic Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1991.PC4-3