[PC4-3] GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base

Shinji NOZAKI、Ryuji MIYAKE、Junichi SHIRAKASHI、Ming QI、Takumi YAMADA、Eisuke TOKUMITSU、Makoto KONAGAI、Kiyoshi TAKAHASHI、Kazuhiko MATSUMOTO (1.Dept. of Physical Electronic Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1991.PC4-3