Evaluation of Hydrogenation Effect in Poly-Si TFT with Charge Pumping Method

K. Hata; Y. Baba; H. Mori; I-Wei Wu; A. G. Lewis; M. Koyanagi

doi:https://doi.org/10.7567/SSDM.1991.S-A-6

1991 International Conference on Solid State Devices and Materials

Aug 27, 1991 - Aug 29, 1991
Pacifico Yokohama, Yokohama, Japan

[S-A-6] Evaluation of Hydrogenation Effect in Poly-Si TFT with Charge Pumping Method

K. Hata, Y. Baba, H. Mori, I-Wei Wu, A. G. Lewis, M. Koyanagi (1.Research Center for Integrated Systems, Hiroshima University, 2.Xerox Co. Palo Alto Research Center)

https://doi.org/10.7567/SSDM.1991.S-A-6

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