In-situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy

Akihiro HASHIMOTO; Naoharu SUGIYAMA; Masao TAMURA

doi:https://doi.org/10.7567/SSDM.1991.S-C-8

[S-C-8] In-situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy

Akihiro HASHIMOTO、Naoharu SUGIYAMA、Masao TAMURA (1.Optoelectronics Technology Research Laboratory、2.Research and Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1991.S-C-8

1991 International Conference on Solid State Devices and Materials

[S-C-8] In-situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy