Evaluation of Localised Trapped Charge and Interface States in MOSFET&apos;s Through Gate Capacitances Measurement

R. Ghodsi; Y. T. Yeow; C. H. Ling; M. K. Alam

doi:https://doi.org/10.7567/SSDM.1992.A-3-1

[A-3-1] Evaluation of Localised Trapped Charge and Interface States in MOSFET's Through Gate Capacitances Measurement

R. Ghodsi, Y. T. Yeow, C. H. Ling, M. K. Alam (1.Department of Electrical Engineering, the University of Queensland, 2.Department of Electrical Engineering, National University of Singapore, 3.School of Microelectronic Engineering, Griffith University)

https://doi.org/10.7567/SSDM.1992.A-3-1

1992 International Conference on Solid State Devices and Materials

[A-3-1] Evaluation of Localised Trapped Charge and Interface States in MOSFET's Through Gate Capacitances Measurement