[A-3-3] Understanding of Enhanced Sensitivity to Hot Carrier Degradation in Drain Engineered n-FETs
C. C. -H. Hsu, B. S. Wu, G. G. Shahidi, B. Davari, W. H. Chang, A. Acovic
(1.IBM Research Division, Thomas J. Watson Research Center, 2.Department of Electrical Engineering, National Tsing-Hua Univ.)
https://doi.org/10.7567/SSDM.1992.A-3-3