Understanding of Enhanced Sensitivity to Hot Carrier Degradation in Drain Engineered n-FETs

C. C. -H. Hsu; B. S. Wu; G. G. Shahidi; B. Davari; W. H. Chang; A. Acovic

doi:https://doi.org/10.7567/SSDM.1992.A-3-3

[A-3-3] Understanding of Enhanced Sensitivity to Hot Carrier Degradation in Drain Engineered n-FETs

C. C. -H. Hsu、B. S. Wu、G. G. Shahidi、B. Davari、W. H. Chang、A. Acovic (1.IBM Research Division, Thomas J. Watson Research Center、2.Department of Electrical Engineering, National Tsing-Hua Univ.)

https://doi.org/10.7567/SSDM.1992.A-3-3

1992 International Conference on Solid State Devices and Materials

[A-3-3] Understanding of Enhanced Sensitivity to Hot Carrier Degradation in Drain Engineered n-FETs