Characterization of Ultra-Thin Capacitors Fabricated Using RTN Treatment Prior to CVD Ta2O5 Film Formation

Satoshi Kamiyama; Pierre-Yves Lesaicherre; Akihiko Ishitani; Akira Sakai; Akio Tanikawa; Iwao Nishiyama

doi:https://doi.org/10.7567/SSDM.1992.A-4-1

[A-4-1] Characterization of Ultra-Thin Capacitors Fabricated Using RTN Treatment Prior to CVD Ta2O5 Film Formation

Satoshi Kamiyama、Pierre-Yves Lesaicherre、Akihiko Ishitani、Akira Sakai、Akio Tanikawa、Iwao Nishiyama (1.VLSI Development Division, NEC Corporation、2.Micro-electronics Research Laboratory, NEC Corporation、3.Opto-electronics Research Laboratory, NEC Corporation)

https://doi.org/10.7567/SSDM.1992.A-4-1

1992 International Conference on Solid State Devices and Materials

[A-4-1] Characterization of Ultra-Thin Capacitors Fabricated Using RTN Treatment Prior to CVD Ta2O5 Film Formation