Electrical Properties of MOSFETs with N2O-Nitrided LPCVD SiO2 Gate Dielectrics

J. Ahn; G. Q. Lo; D. L. Kwong

doi:https://doi.org/10.7567/SSDM.1992.A-4-4

1992 International Conference on Solid State Devices and Materials

Aug 26, 1992 - Aug 28, 1992
Tsukuba Center Building, Tsukuba, Japan

[A-4-4] Electrical Properties of MOSFETs with N2O-Nitrided LPCVD SiO2 Gate Dielectrics

J. Ahn, G. Q. Lo, D. L. Kwong (1.Microelectronics Research Center Department of Electrical and Computer Engineering The University of Texas at Austin)

https://doi.org/10.7567/SSDM.1992.A-4-4

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