[A-4-4] Electrical Properties of MOSFETs with N2O-Nitrided LPCVD SiO2 Gate Dielectrics

J. Ahn、G. Q. Lo、D. L. Kwong (1.Microelectronics Research Center Department of Electrical and Computer Engineering The University of Texas at Austin)

https://doi.org/10.7567/SSDM.1992.A-4-4