[B-3-3] Temperature Dependence of the DC and High Frequency Properties of HEMTs with Sub 0.1 μm Gatelength

A. Marten、H. Schweizer H. Nickel、W. Schlapp、R. Losch (1.Physikalisches Institut, Universitat Stuttgart、2.FTZ-Telekom)

https://doi.org/10.7567/SSDM.1992.B-3-3