[B-3-3] Temperature Dependence of the DC and High Frequency Properties of HEMTs with Sub 0.1 μm Gatelength

A. Marten, H. Schweizer H. Nickel, W. Schlapp, R. Losch (1.Physikalisches Institut, Universitat Stuttgart, 2.FTZ-Telekom)

https://doi.org/10.7567/SSDM.1992.B-3-3