Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact

[D-1-5] Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact

H. Kotaki, K. Mitsuhashi, J. Takagi, Y. Akagi, M. Koba (1.Central Research Laboratories, Research and Analysis Center, Sharp Corporation)