[D-1-5] Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact

H. Kotaki、K. Mitsuhashi、J. Takagi、Y. Akagi、M. Koba (1.Central Research Laboratories, Research and Analysis Center, Sharp Corporation)

https://doi.org/10.7567/SSDM.1992.D-1-5