The Japan Society of Applied Physics

[PA2-2] A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric

C. C. -H. Hsu、A. Acovic、L. Dori、B. Wu、T. Lii、D. Quinlan、D. DiMaria、Y. Taur、M. Wordeman、T. Ning (1.IBM Research Division, Thomas J. Watson Research Center、2.Department of Electrical Engineering, National Tsing-Hua Univ.)

https://doi.org/10.7567/SSDM.1992.PA2-2