Doping Control in LPCVD in-situ Boron Doped Polysilicon

Jun-ichi Shiozawa; Yosio Kasai; Yuu-ichi Mikata; Kikuo Yamabe

doi:https://doi.org/10.7567/SSDM.1992.PD2-9

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜 1992年8月28日
Tsukuba Center Building, Tsukuba, Japan

[PD2-9] Doping Control in LPCVD in-situ Boron Doped Polysilicon

Jun-ichi Shiozawa、Yosio Kasai、Yuu-ichi Mikata、Kikuo Yamabe (1.ULSI Research Center, Integrated Circuit Advanced Process Engineering Depart. Toshiba Corporation)

https://doi.org/10.7567/SSDM.1992.PD2-9

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