Doping Control in LPCVD in-situ Boron Doped Polysilicon

Jun-ichi Shiozawa; Yosio Kasai; Yuu-ichi Mikata; Kikuo Yamabe

doi:https://doi.org/10.7567/SSDM.1992.PD2-9

1992 International Conference on Solid State Devices and Materials

Aug 26, 1992 - Aug 28, 1992
Tsukuba Center Building, Tsukuba, Japan

[PD2-9] Doping Control in LPCVD in-situ Boron Doped Polysilicon

Jun-ichi Shiozawa, Yosio Kasai, Yuu-ichi Mikata, Kikuo Yamabe (1.ULSI Research Center, Integrated Circuit Advanced Process Engineering Depart. Toshiba Corporation)

https://doi.org/10.7567/SSDM.1992.PD2-9

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