[PD3-1] Hemispherical Grained Silicon (HSG-Si) Formation on In-Situ Phosphorous Doped Amorphous-Si Using The Seeding Method

H. Watanabe, T. Tatsumi, A. Sakai, S. Shishiguchi, T. Niino, I. Honma, T. Mizutani, T. Kikkawa (1.Microelectronics Research Labs., NEC Corp., 2.VLSI Development Division, NEC Corp.)

https://doi.org/10.7567/SSDM.1992.PD3-1