[PD3-1] Hemispherical Grained Silicon (HSG-Si) Formation on In-Situ Phosphorous Doped Amorphous-Si Using The Seeding Method

H. Watanabe、T. Tatsumi、A. Sakai、S. Shishiguchi、T. Niino、I. Honma、T. Mizutani、T. Kikkawa (1.Microelectronics Research Labs., NEC Corp.、2.VLSI Development Division, NEC Corp.)

https://doi.org/10.7567/SSDM.1992.PD3-1