[PD3-10] Fabrication of a SiGe-Channel MOSFET Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition
Kinya GOTO、Junichi MUROTA、Takahiro MAEDA、Reiner SCHUTZ、Kiyohito AIZAWA、Roland KIRCHER、Kuniyoshi YOKOO、Shoichi ONO
(1.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)
https://doi.org/10.7567/SSDM.1992.PD3-10