[PD3-10] Fabrication of a SiGe-Channel MOSFET Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition

Kinya GOTO, Junichi MUROTA, Takahiro MAEDA, Reiner SCHUTZ, Kiyohito AIZAWA, Roland KIRCHER, Kuniyoshi YOKOO, Shoichi ONO (1.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1992.PD3-10