[PD3-10] Fabrication of a SiGe-Channel MOSFET Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition

Kinya GOTO、Junichi MUROTA、Takahiro MAEDA、Reiner SCHUTZ、Kiyohito AIZAWA、Roland KIRCHER、Kuniyoshi YOKOO、Shoichi ONO (1.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1992.PD3-10