[PD3-4] Low-Temperature Furnace-Annealed Aluminum-Gate MOSFET for Ultra-High-Speed Integrated Circuits

K. Kotani, T. Ohmi, S. Shimonishi, T. Migita, H. Komori, T. Shibata, T. Nitta (1.Department of Electronic Engineering, Tohoku University, 2.Device Development Center, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1992.PD3-4