Low-Temperature Furnace-Annealed Aluminum-Gate MOSFET for Ultra-High-Speed Integrated Circuits

K. Kotani; T. Ohmi; S. Shimonishi; T. Migita; H. Komori; T. Shibata; T. Nitta

doi:https://doi.org/10.7567/SSDM.1992.PD3-4

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜 1992年8月28日
Tsukuba Center Building, Tsukuba, Japan

[PD3-4] Low-Temperature Furnace-Annealed Aluminum-Gate MOSFET for Ultra-High-Speed Integrated Circuits

K. Kotani、T. Ohmi、S. Shimonishi、T. Migita、H. Komori、T. Shibata、T. Nitta (1.Department of Electronic Engineering, Tohoku University、2.Device Development Center, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1992.PD3-4

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