[S-IV-3] High Speed 0.1 μm CMOS Devices Operating at Room Temperature

A. Toriumi、T. Mizuno、M. Iwase、M. Takahashi、H. Niiyama、M. Fukumoto、S. Inaba、I. Mori、M. Yoshimi (1.ULSI Research Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1992.S-IV-3