3 V Operation of 70 nm Gate Length MOSFET with New Double Punchthrough Stopper Structure

Takeshi HASHIMOTO; Yoshimi SUDOH; Hiroyuki KURINO; Akira NARAI; Shin YOKOYAMA; Yasuhiro HORIIKE; Mitsumasa KOYANAGI

doi:https://doi.org/10.7567/SSDM.1992.S-IV-4

1992 International Conference on Solid State Devices and Materials

Aug 26, 1992 - Aug 28, 1992
Tsukuba Center Building, Tsukuba, Japan

[S-IV-4] 3 V Operation of 70 nm Gate Length MOSFET with New Double Punchthrough Stopper Structure

Takeshi HASHIMOTO, Yoshimi SUDOH, Hiroyuki KURINO, Akira NARAI, Shin YOKOYAMA, Yasuhiro HORIIKE, Mitsumasa KOYANAGI (1.Research Center for Integrated Systems, Hiroshima University)

https://doi.org/10.7567/SSDM.1992.S-IV-4

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