Significance of Charge Sharing in Causing Threshold Voltage Roll-Off in Highly Doped 0.1-μm Si MOSFETs and Its Suppression by Atomic Layer Doping(ALD)

[A-2-2] Significance of Charge Sharing in Causing Threshold Voltage Roll-Off in Highly Doped 0.1-μm Si MOSFETs and Its Suppression by Atomic Layer Doping(ALD)

Hiromasa Noda, Kaori Nakamura, Shin'ichiro Kimura (1.Central Research Laboratory, Hitachi Ltd.)