Impact of Contact Resistance and Junction Capacitance on the Switching Performance in Scaled 0.1μm CMOS Devices

Satoshi Inaba; Tomohisa Mizuno; Masao Iwase; Hiromi Niiyama; Makoto Yoshimi; Akira Toriumi

doi:https://doi.org/10.7567/SSDM.1993.A-2-5

[A-2-5] Impact of Contact Resistance and Junction Capacitance on the Switching Performance in Scaled 0.1μm CMOS Devices

Satoshi Inaba, Tomohisa Mizuno, Masao Iwase, Hiromi Niiyama, Makoto Yoshimi, Akira Toriumi (1.ULSI Research Laboratories, R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1993.A-2-5

1993 International Conference on Solid State Devices and Materials

[A-2-5] Impact of Contact Resistance and Junction Capacitance on the Switching Performance in Scaled 0.1μm CMOS Devices