[A-3-2] Reliability of nm-Oxide Formed on Si Wafers Containing Crystal Defects

Jiro Yugami、Takashi Takahama、Makoto Ohkura (1.Central Research Laboratory, Hitachi, Ltd.、2.Hitachi VLSI Engineering, Co.)

https://doi.org/10.7567/SSDM.1993.A-3-2