[A-4-1] Temperature Effects of the Inversion Layer Electron and Hole Mobility of MOSFETs from 85K to 500K

J. S. Duster、Z. H. Liu、P. K. Ko、C. Hu (1.Dept. of EECS, University of California)

https://doi.org/10.7567/SSDM.1993.A-4-1