[A-4-3] Characterization of Hot Electron Induced Interface States in LATID MOS Devices Using an Improved Charge Pumping Method

Steve S. Chung, J.-J. Yang, C.-H. Tang, P.-C. Chou (1.Department of Electronic Engineering, National Chiao Tung University)

https://doi.org/10.7567/SSDM.1993.A-4-3