[A-4-5] A Two-Step Tunneling Model for the Stress Induced Leakage Current in Thin Silicon Dioxide Films

Naoki Yasuda、Nalin Patel、Akira Toriumi (1.ULSI Research Labs, R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1993.A-4-5