[C-1-4] Simulation of Tunneling Current due to Enhanced Electric Fields at the Edge of Gate Electrode

Hirotaka Muto, Hiroyoshi Kitabayashi, Koichiro Nakanishi Setsuo Wake, Moriyoshi Nakajima (1.Manufacturing Development Lab., 2.Kita-Itami Works Mitsubishi Electric Corp.)

https://doi.org/10.7567/SSDM.1993.C-1-4