[C-2-2] Stress-Induced Quasi-Hetero-Emitter Band Structure for a Phosphorus-Doped Poly-Si Emitter Bipolar Transistor

Masao Kondo、Takashi Kobayashi、Yoichi Tamaki (1.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1993.C-2-2