[C-6-3] Thin-Film Transistor Characteristics Fabricated on Nucleation-Controlled Poly-Si Films by Surface Steps

Tanemasa Asano、Kenji Makihira、Hiroomi Tsutae (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

https://doi.org/10.7567/SSDM.1993.C-6-3