[C-7-4] Ti-Silicided Ultra Shallow p+-n Junction Formation by As-Preamorphization through Pre-Deposited Amorphous Si Layer

Yeo Hwan Kim、Kuk Jin Chun、Sang Jik kwon、Jong Duk Lee (1.ISRC, Seoul National University、2.Dept. of Electronics Engineering, Kyungwon University)

https://doi.org/10.7567/SSDM.1993.C-7-4