Growth of GaAs on Si(100) with (GaAs)1-x(Si2)x/GaAs Strained-Layer Superlattice by Migration-Enhanced Epitaxy

Kazuhiko Nozawa; Tatavarti Sudersena Rao; Yoshiji Horikoshi

doi:https://doi.org/10.7567/SSDM.1993.D-2-1

[D-2-1] Growth of GaAs on Si(100) with (GaAs)1-x(Si2)x/GaAs Strained-Layer Superlattice by Migration-Enhanced Epitaxy

Kazuhiko Nozawa、Tatavarti Sudersena Rao、Yoshiji Horikoshi (1.NTT Basic Research Laboratories、2.Institute of Microstructural Sciences, National Research Council of Canada)

https://doi.org/10.7567/SSDM.1993.D-2-1

1993 International Conference on Solid State Devices and Materials

[D-2-1] Growth of GaAs on Si(100) with (GaAs)1-x(Si2)x/GaAs Strained-Layer Superlattice by Migration-Enhanced Epitaxy