Vertical Si-MOSFETs with Channel Lengths Down to 45nm

H. Gossner; W. Kiunke; I. Eisele; L. Risch; K. Hofmann; R. Treichler; H. Cerva

doi:https://doi.org/10.7567/SSDM.1993.PB-1-20

1993 International Conference on Solid State Devices and Materials

Aug 29, 1993 - Sep 1, 1993
Makuhari Messe, Chiba, Japan

[PB-1-20] Vertical Si-MOSFETs with Channel Lengths Down to 45nm

H. Gossner, W. Kiunke, I. Eisele, L. Risch, K. Hofmann, R. Treichler, H. Cerva (1.Universitat der Bundeswehr Munchen, 2.Siemens AG, Research Laboratories)

https://doi.org/10.7567/SSDM.1993.PB-1-20

▲