[PB-3-10] A Study of Short Channel Behavior of Accumulation Type SOI MOSFETs

H.-O. Joachim、Y. Yamaguchi、Y. Inoue、T. Nishimura、N. Tsubouchi (1.Mitsubishi Electric Corporation, ULSI Laboratory)

https://doi.org/10.7567/SSDM.1993.PB-3-10