Anomalous Resistance in 0.1μm-Region Ti-Silicided Poly Si Gate

Minoru Takahashi; Iwao Kunishima; Masao Iwase; Hiromi Niiyama Tomohisa Mizuno; Naoki Yasuda; Makoto Yoshimi

doi:https://doi.org/10.7567/SSDM.1993.PB-3-5

1993 International Conference on Solid State Devices and Materials

Aug 29, 1993 - Sep 1, 1993
Makuhari Messe, Chiba, Japan

[PB-3-5] Anomalous Resistance in 0.1μm-Region Ti-Silicided Poly Si Gate

Minoru Takahashi, Iwao Kunishima, Masao Iwase, Hiromi Niiyama Tomohisa Mizuno, Naoki Yasuda, Makoto Yoshimi (1.ULSI Research Labs, R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1993.PB-3-5

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