[PB-3-6] Bipolar Transistor with a Buried Layer Formed by High Energy Ion Implantation for Sub-Half Micron BiCMOS LSI
T. Kuroi、Y. Kawasaki、Y. Ishigaki、Y. Kinoshita、M. Inuishi、N. Tsubouchi
(1.ULSI Laboratory, Mitsubishi Electric Corporation)
https://doi.org/10.7567/SSDM.1993.PB-3-6
