[PB-3-6] Bipolar Transistor with a Buried Layer Formed by High Energy Ion Implantation for Sub-Half Micron BiCMOS LSI

T. Kuroi, Y. Kawasaki, Y. Ishigaki, Y. Kinoshita, M. Inuishi, N. Tsubouchi (1.ULSI Laboratory, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1993.PB-3-6