[PC-1-11] Selective Tungsten CVD with High Deposition Rate for ULSI Application

H. Suzuki、Y. Maeda、K. Morita、M. Morita、T. Ohmi (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University、2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1993.PC-1-11