Impact of Dopant-Redistribution at TiSi2/Si Interface and a Doubly-S/D-Ion-Implanted-SALICIDE Structure for Subhalfmicron CMOS

[PC-1-19] Impact of Dopant-Redistribution at TiSi2/Si Interface and a Doubly-S/D-Ion-Implanted-SALICIDE Structure for Subhalfmicron CMOS

A. Ohtomo、J. Ida、K. Kai、I. Aikawa、K. Yonekawa、A. Kita、K. Nishi (1.VLSI Research and Development Center OKI Electric Industry Co., Ltd.)