Impact of Dopant-Redistribution at TiSi2/Si Interface and a Doubly-S/D-Ion-Implanted-SALICIDE Structure for Subhalfmicron CMOS

[PC-1-19] Impact of Dopant-Redistribution at TiSi2/Si Interface and a Doubly-S/D-Ion-Implanted-SALICIDE Structure for Subhalfmicron CMOS

A. Ohtomo, J. Ida, K. Kai, I. Aikawa, K. Yonekawa, A. Kita, K. Nishi (1.VLSI Research and Development Center OKI Electric Industry Co., Ltd.)