[PC-1-4] Highly Reliable Oxynitride Gate Dielectrics for Dual Gate CMOS Applications

A. B. Joshi、J. Ahn、G. W. Yoon、J. Kim、M. Bhat、D. L. Kwong (1.Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin、2.Digital Communications Division, Rockwell International Corporation)

https://doi.org/10.7567/SSDM.1993.PC-1-4