[PD-3-4] Process Induced Defects in InP Produced by Chemical Vapor Deposition of Surface Passivation Dielectrics

T. Hashizume、H. Hasegawa、R. Riemenschneider、H. L. Hartnagel (1.Hokkaido Polytechnic College、2.Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido University、3.Institut fur Hochfrequentztechnik, Technische Hochschule Darmstadt)

https://doi.org/10.7567/SSDM.1993.PD-3-4