[S-I-9-2] High-Mobility p-Channel MOSFET on Strained Si

D. K. Nayak、J. C. S. Woo、J. S. Park、K. L. Wang、K. P. MacWilliams (1.Department of Electrical Engineering University of California、2.The Aerospace Corporation、3.Research Center for Advanced Science and Technology (RCAST) The University of Tokyo)

https://doi.org/10.7567/SSDM.1993.S-I-9-2