[S-II-5] Influence of Si-SiO2 Interface Microroughness and Dopant Concentration on Electron Channel Mobility in MOSFET

K. Ohmi、K. Nakamura、T. Futatsuki、K. Makihara、T. Ohmi (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University、2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1993.S-II-5